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首頁(yè)> 外文學(xué)位 >Contact resistance and hole mobility in pentacene thin-film transistors.
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Contact resistance and hole mobility in pentacene thin-film transistors.

機(jī)譯：并五苯薄膜晶體管的接觸電阻和空穴遷移率。

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Although, the class of materials known as organic semiconductors has been studied since the early 1900s, only recently has their performance (mobility) become sufficient for use in active devices. In the past few decades, organic semiconductors have garnered a great deal of attention due to their potential use in applications such as flexible circuitry, emissive displays, and solar cells. Many fundamental questions still remain, however, about the nature of charge injection and transport mechanisms along with limits of maximum performance. To address some of the remaining issues, this thesis employs field-effect transistor measurements to examine contact resistance properties of metal-organic interfaces and the causes of ultra-high mobilities observed under specific fabrication conditions.; This thesis describes field-effect transistor measurements in a gated four-probe configuration on the organic semiconductor pentacene in order to address questions of charge injection and transport as a function of pentacene film thickness, contact metal workfunction, electrode geometry, gate voltage, and temperature. The gated four-probe technique is a powerful tool to use for examining semiconductor materials because it can simultaneously extract information about the source resistance, drain resistance, and contact-corrected semiconductor mobility. Modeling was performed to study the accuracy of the gated four-probe technique. Pentacene thin-film transistors exhibited linear mobility as high as 1.75 cm2/V-s, contact resistance as low as 1.3 kO-cm, and activation energies for film mobility and contact resistances as low as 15 meV. Results indicate that contact barriers known to exist at metal-organic interfaces by ultraviolet photoelectron spectroscopy may not take part in charge injection.; In a standard three-terminal transistor configuration, process conditions leading to mobilities greater than 6 cm2/V-s were examined. Two thin-film transistor fabrication methods are presented and compared. Components of each fabrication process are examined for their role in production of the observed ultra-high mobilities. The ultra-high mobilities are only seen under certain pentacene purification and deposition conditions on polystyrene-coated substrates. The results presented in this thesis suggest careful formation of the first few pentacene layers on low surface energy substrates is critical to the production of ultra-high mobilities.
機(jī)譯：盡管自1900年代初以來(lái)就對(duì)被稱為有機(jī)半導(dǎo)體的材料進(jìn)行了研究，但直到最近才使它們的性能（遷移率）足以用于有源器件。在過(guò)去的幾十年中，有機(jī)半導(dǎo)體由于其在諸如柔性電路，發(fā)光顯示器和太陽(yáng)能電池等應(yīng)用中的潛在用途而備受關(guān)注。但是，關(guān)于電荷注入和傳輸機(jī)制的性質(zhì)以及最大性能的限制，仍然存在許多基本問(wèn)題。為了解決一些剩余的問(wèn)題，本文采用場(chǎng)效應(yīng)晶體管的測(cè)量方法來(lái)檢驗(yàn)金屬-有機(jī)界面的接觸電阻特性以及在特定制造條件下觀察到的超高遷移率的原因。本論文描述了在有機(jī)半導(dǎo)體并五苯上以門控四探針配置的場(chǎng)效應(yīng)晶體管測(cè)量，以解決電荷注入和傳輸與并五苯膜厚度，接觸金屬功函數(shù)，電極幾何形狀，柵極電壓和溫度有關(guān)的問(wèn)題。門控四探針技術(shù)是用于檢查半導(dǎo)體材料的強(qiáng)大工具，因?yàn)樗梢酝瑫r(shí)提取有關(guān)源電阻，漏電阻和接觸校正的半導(dǎo)體遷移率的信息。進(jìn)行建模以研究門控四探針技術(shù)的準(zhǔn)確性。并五苯薄膜晶體管的線性遷移率高至1.75 cm2 / V-s，接觸電阻低至1.3 kO-cm，膜遷移率的活化能和接觸電阻低至15 meV。結(jié)果表明，通過(guò)紫外光電子能譜已知存在于金屬有機(jī)界面的接觸勢(shì)壘可能不參與電荷注入。在標(biāo)準(zhǔn)的三端晶體管配置中，檢查了導(dǎo)致遷移率大于6 cm2 / V-s的工藝條件。提出并比較了兩種薄膜晶體管的制造方法。檢查每個(gè)制造過(guò)程的組件在觀察到的超高遷移率生產(chǎn)中的作用。僅在一定的并五苯純化和沉積條件下才能在聚苯乙烯涂層的基材上看到超高遷移率。本文提出的結(jié)果表明，在低表面能基底上仔細(xì)地形成并五苯層是形成超高遷移率的關(guān)鍵。

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  • 作者

    Pesavento, Paul Valentine.;

  • 作者單位

    University of Minnesota.;

  • 授予單位 University of Minnesota.;
  • 學(xué)科 Engineering Materials Science.
  • 學(xué)位 Ph.D.
  • 年度 2005
  • 頁(yè)碼 210 p.
  • 總頁(yè)數(shù) 210
  • 原文格式 PDF
  • 正文語(yǔ)種 eng
  • 中圖分類 工程材料學(xué);
  • 關(guān)鍵詞

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