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首頁> 外文學(xué)位 >Characterization of IV-VI semiconductor materials and devices by Fourier transform infrared spectroscopy.
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Characterization of IV-VI semiconductor materials and devices by Fourier transform infrared spectroscopy.

機譯:通過傅里葉變換紅外光譜對IV-VI半導(dǎo)體材料和器件進(jìn)行表征。

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摘要

Transmission and photoluminescence properties of IV-VI semiconductor materials grown by molecular beam epitaxy (UBE) and liquid phase epitaxy (LPE) were characterized using a vacuum-bench type Fourier transform infrared (FTIR) spectrometer. Samples for transmission measurements included Pb1-x EuxSe (x = 0%, 2.44%, 7.32%) and Pb1-xSr xSe (x = 0%, 7.83%, 15.7%, 26.1%) grown by MBE on Si(111) and BaF 2(111) substrates, respectively. Pb1-xSnxSe (x = 0%, 3%, 5%, 6%, 7%, 10%) samples grown by LPE on MBE-prepared Si(100) substrates were also measured. Fundamental absorption edge energies for these alloys were derived from the transmission spectra and their dependence on composition and temperature were reported. Refractive indices for Pb 1-xSrxSe were calculated based on the interference data. Effects of alloy disorder, impurity and free-carrier absorption, and cryogenic cycling are observed in the transmission spectral data. Photoluminescence experiments performed on LPE-grown PbSe, PbTe, PbSeTe, and PbSnSeTe (liquid tin contents of 5% and 40%) epilayers show unusual, strong, and above bandgap emissions at temperatures ranging from cryogenic to above room temperature. These emissions may be the first direct experimental observation of defect states associated with anion (chalcogen) vacancies theorized three decades ago. These measurements provide useful information for designing structures that will be used for fabrication of mid-IR lasers.; Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modular type MR spectrometer. The laser exhibits wide (up to 4 cm-1) continuous wave, single-mode tuning regions between 90 K to 116 K for currents in the range of 400 mA to 1000 mA. This type of mid-IR laser characterization is very useful for designing laser-based molecular spectroscopy instrumentation.
機譯:使用真空臺型傅立葉變換紅外光譜儀(FTIR)對通過分子束外延(UBE)和液相外延(LPE)生長的IV-VI半導(dǎo)體材料的透射和光致發(fā)光特性進(jìn)行了表征。用于傳輸測量的樣本包括MBE在Si(111)和上通過MBE生長的Pb1-x EuxSe(x = 0%,2.44%,7.32%)和Pb1-xSr xSe(x = 0%,7.83%,15.7%,26.1%) BaF 2(111)基板。還測量了LPE在MBE制備的Si(100)襯底上生長的Pb1-xSnxSe(x = 0%,3%,5%,6%,7%,7%,10%)樣品。這些合金的基本吸收邊能量是從透射光譜中得出的,并報道了它們對成分和溫度的依賴性。根據(jù)干涉數(shù)據(jù)計算出Pb 1-xSrxSe的折射率。在透射光譜數(shù)據(jù)中觀察到合金無序,雜質(zhì)和自由載流子吸收以及低溫循環(huán)的影響。對LPE生長的PbSe,PbTe,PbSeTe和PbSnSeTe(液態(tài)錫含量為5%和40%)的外延層進(jìn)行的光致發(fā)光實驗顯示,在從低溫到高于室溫的溫度范圍內(nèi),帶隙發(fā)射異常,強烈且超過能隙。這些排放物可能是對三十年前理論上與陰離子(硫族元素)空位有關(guān)的缺陷狀態(tài)的首次直接實驗觀察。這些測量為設(shè)計將用于制造中紅外激光器的結(jié)構(gòu)提供了有用的信息。還使用模塊化MR光譜儀獲得了商用IV-VI半導(dǎo)體PbEuSe二極管激光器的發(fā)射。對于400 mA至1000 mA范圍內(nèi)的電流,該激光器具有90 K至116 K的寬連續(xù)波(高達(dá)4 cm-1)單模調(diào)諧區(qū)域。這種類型的中紅外激光表征對于設(shè)計基于激光的分子光譜儀器非常有用。

著錄項

  • 作者

    Chao, I-Na.;

  • 作者單位

    The University of Oklahoma.;

  • 授予單位 The University of Oklahoma.;
  • 學(xué)科 Engineering Materials Science.; Physics Condensed Matter.; Engineering Electronics and Electrical.
  • 學(xué)位 Ph.D.
  • 年度 1999
  • 頁碼 131 p.
  • 總頁數(shù) 131
  • 原文格式 PDF
  • 正文語種 eng
  • 中圖分類 工程材料學(xué);無線電電子學(xué)、電信技術(shù);
  • 關(guān)鍵詞

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