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Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material.

機譯：遷移譜分析在現(xiàn)代多層紅外器件材料中的應(yīng)用。

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Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport properties in the presence of mixed conduction, variable-field Hall characterization can be performed and then analyzed using mobility spectrum analysis to extract parameters of interest. Transport parameters are expected to aid in modeling and simulation of materials and can be used in optimization of particular problem areas. The performances of infrared devices ultimately depend on transport mechanisms, so an accurate determination becomes paramount. This work focuses on the characterization of two materials at the forefront of IR detectors; incumbent, tried and true, HgCdTe technologies and emergent III-V based superlattice structures holding much promise for future detector purposes. Ex-situ doped long-wave planar devices and in-situ doped mid-wave dual-layer heterojunctions (P+/n architecture) HgCdTe structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and lattice-mismatched Si or GaAs. A detailed study of scattering mechanisms reveal that growth on lattice-mismatched substrates leads to dislocation scattering limited mobility at low temperature, correlating with extrinsically limited minority carrier lifetime and excesses diode tunneling current, resulting in overall lower performance. Mobility spectrum analysis proves to be an effective diagnostic on performance as well as providing insight in surface, substrate-interface, and minority carrier transport.;Two main issues limiting performance of III-V based superlattices are addressed; high residual doping backgrounds and surface passivation. Mobility spectrum analysis proves to be a reliable method of determining background doping levels. Modest improvements are obtained via post-growth thermal annealing, but results suggest future efforts should be placed upon growth improvements. Passivation efforts using charged electret dielectric show promise but further refinements would be needed. Thiol passivation is identified as a successful passivant of Be-doped p-type InAs/GaSb long-wave absorbers using mobility spectrum analysis, correlating with fabricated device dark current. Mobility spectrum analysis demonstrates it will be indispensable in future development of III-V material.
機譯：用于紅外（IR）成像的現(xiàn)代檢測器材料包含復(fù)雜的多層體系結(jié)構(gòu)，因此需要更強大的表征技術(shù)。為了確定在混合傳導(dǎo)存在下的多載流子傳輸特性，可以執(zhí)行可變場霍爾表征，然后使用遷移率譜分析進行分析以提取目標參數(shù)。預(yù)計運輸參數(shù)將有助于材料的建模和仿真，并可用于優(yōu)化特定問題區(qū)域。紅外設(shè)備的性能最終取決于傳輸機制，因此準確的確定至關(guān)重要。這項工作著眼于紅外探測器最前沿的兩種材料的表征?，F(xiàn)有的，久經(jīng)考驗的，真實的HgCdTe技術(shù)和新興的基于III-V的超晶格結(jié)構(gòu)為將來的探測器用途提供了廣闊前景。針對襯底選擇，探索了異位摻雜長波平面器件和原位摻雜中波雙層異質(zhì)結(jié)（P + / n結(jié)構(gòu)）HgCdTe結(jié)構(gòu)，即晶格匹配的CdZnTe和晶格不匹配的Si或GaAs。對散射機理的詳細研究表明，晶格失配襯底上的生長會導(dǎo)致位錯散射在低溫下的遷移率受到限制，這與外部載流子壽命有限和二極管隧穿電流過大相關(guān)，從而導(dǎo)致整體性能降低。遷移譜分析被證明是一種有效的性能診斷方法，并且可以提供對表面，基質(zhì)界面和少數(shù)載流子傳輸?shù)亩床炝?。解決了限制基于III-V的超晶格性能的兩個主要問題；高殘留摻雜背景和表面鈍化。遷移譜分析被證明是確定背景摻雜水平的可靠方法。通過生長后的熱退火獲得了適度的改善，但是結(jié)果表明未來的努力應(yīng)該放在改善生長上。使用帶電駐極體電介質(zhì)的鈍化工作有望實現(xiàn)，但是還需要進一步完善。使用遷移譜分析將硫醇鈍化確定為Be摻雜的p型InAs / GaSb長波吸收劑的成功鈍化劑，與制造的器件暗電流相關(guān)。遷移譜分析表明，它在III-V材料的未來開發(fā)中必不可少。

著錄項

  • 作者

    Brown, Alexander Earl.;

  • 作者單位

    University of Illinois at Chicago.;

  • 授予單位 University of Illinois at Chicago.;
  • 學(xué)科 Physics.
  • 學(xué)位 Ph.D.
  • 年度 2015
  • 頁碼 230 p.
  • 總頁數(shù) 230
  • 原文格式 PDF
  • 正文語種 eng
  • 中圖分類 遙感技術(shù);
  • 關(guān)鍵詞

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