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首頁> 中文期刊> 《電子器件》 >10A/600 V大功率硅基JBS肖特基二極管的制備?

10A/600 V大功率硅基JBS肖特基二極管的制備?

     
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To compensate the high leakage current and low reverse breakdown voltage of conventional Schottky di-ode,a JBS diode structure was formed by combining strip P+-N junction grids and Schottky junction,which termina-ted by seven floating field limiting rings( FGRs) and one cutoff ring structure. Simulation was utilized to determine the optimized parameters in fabrication,SBD and PiN diode were fabricated as contrast. The results showed that JBS diodes behave similar to SBD diodes in the on-state while reverse characteristics similar to PiN diodes. The obtained JBS diodes were capable of blocking up to 600 V when the leakage current density was less than 1×10-5 A/cm2,and the forward voltage drop at a current density of 80.6 A/cm2 is 1.1 V.%為了彌補(bǔ)傳統(tǒng)肖特基二極管漏電流大和反向耐壓低的不足，采用柵條P+-N結(jié)和肖特基結(jié)嵌套形成結(jié)勢壘肖特基二極管( JBS)，終端結(jié)構(gòu)由7道場限環(huán)和1道切斷環(huán)構(gòu)成。通過模擬確定最優(yōu)參數(shù)后流片試驗(yàn)，同步制備肖特基二極管( SBD)和PiN二極管作為對比。結(jié)果表明：制備的JBS二極管兼?zhèn)銼BD二極管正偏和PiN二極管反偏的優(yōu)點(diǎn)。在漏電流密度小于1×10-5 A/cm2時(shí)，反向耐壓達(dá)到600 V；正向電流10 A(80.6 A/cm2)時(shí)，導(dǎo)通壓降僅為1.1V。

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