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Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices

機譯：用于高頻和醫(yī)療設備的垂直雙擴散金屬氧化物半導體（VDMOS）功率晶體管結構的優(yōu)化

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Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

機譯：諸如垂直，雙擴散，金屬氧化物半導體（VDMOS）之類的功率晶體管已廣泛用于醫(yī)療設備的放大電路中。這項研究的目的是構建具有優(yōu)化結構的VDMOS功率晶體管，以增強醫(yī)療設備的運行。首先，通過注入未鉗位的電感開關（UIS）和法拉第屏蔽將硼注入硅中。植入法拉第屏蔽罩是為了替換器件入口部分的柵極場寄生電容器。另外，為了降低VDMOS功率晶體管的寄生雙極結晶體管（BJT）的影響，使用了注入UIS。本研究中使用的研究工具是Silvaco軟件。通過在優(yōu)化的VDMOS結構中降低晶體管的進入電阻，可以減少晶體管入口處的功率損耗和噪聲，并且通過增加擊穿電壓，可以延長VDMOS晶體管的壽命，從而增加漏極電流和降低羅恩。因此，這導致增強了使用晶體管的高頻醫(yī)療設備的操作，例如射頻（RF）和心電圖機。

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期刊名稱 Electronic Physician
作者
Rozita Farhadi; Bita Farhadi;
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作者單位

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年(卷),期 2014(6),2
年度 2014
頁碼 816–819
總頁數(shù) 4
原文格式 PDF
正文語種
中圖分類
關鍵詞
VDMOS transistor UIS implant electrocardiograph machine noise high frequency;

機譯：VDMOS晶體管;UIS植入物;心電圖機;噪聲;高頻;

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1. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices [J] . Rozita Farhadi, Bita Farhadi Electronic Physician . 2014,第2期

機譯：用于高頻和醫(yī)療設備的垂直雙擴散金屬氧化物半導體（VDMOS）功率晶體管結構的優(yōu)化
2. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices [J] . Electronic Physician . 2014,第2期

機譯：用于高頻和醫(yī)療設備的垂直雙擴散金屬氧化物半導體（VDMOS）功率晶體管結構的優(yōu)化
3. Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors [J] . Mehrad Mahsa Materials science in semiconductor processing . 2015,第Null期

機譯：絕緣體上硅上的橫向雙擴散金屬氧化物半導體的漂移區(qū)中的薄層氧化物：一種新型器件結構，可實現(xiàn)可靠的高溫功率晶體管
4. New SOI structures for intelligent power ICs with vertical double-diffused MOS output devices [C] . Kikuchi, H., Hamajima, . 1995

機譯：具有垂直雙擴散MOS輸出器件的智能功率IC的新SOI結構
5. Total ionizing dose effects in power vertical double-diffused metal-oxide-semiconductor field effect transistors. [D] . Park, Mun-Soo. 2004

機譯：功率垂直雙擴散金屬氧化物半導體場效應晶體管中的總電離劑量效應。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

機譯：作為后CMOS器件基于石墨烯的橫向異質結構晶體管表現(xiàn)出比基于石墨烯的垂直晶體管更好的固有性能
7. Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structureudfor Use in High Frequencies and Medical Devices [O] . Farhadi Rozita, Farhadi Bita 2014

機譯：垂直雙擴散金屬氧化物半導體（VDMOS）功率晶體管結構的優(yōu)化 ud用于高頻和醫(yī)療設備
8. SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiCACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition Chara [R] . Davis, R. F., Baliga, B. J., Tomozawa, H. S., 1998

機譯：siC離散功率器件 - 平面6H-siCaCCUFET的分析和優(yōu)化;平面橫向溝道siC垂直高功率JFET;平面橫向通道m(xù)EsFET-a新型siC垂直功率器件;通過熱壁化學氣相沉積Chara生長

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Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices

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