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Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

機(jī)譯：高溫功率電子器件用碳化硅轉(zhuǎn)換器和MEMS器件的評論

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.
機(jī)譯：功率電子產(chǎn)品在當(dāng)今市場中的重大進(jìn)步，要求高性能功率轉(zhuǎn)換系統(tǒng)和MEMS器件能夠在惡劣的環(huán)境（例如高溫）下可靠地運(yùn)行。碳化硅（SiC）電力電子器件的特點(diǎn)是結(jié)溫高，功耗低，熱穩(wěn)定性好，因此對應(yīng)用于高溫環(huán)境的轉(zhuǎn)換器和MEMS器件具有吸引力。本文概述了高溫功率電子器件，重點(diǎn)是高溫轉(zhuǎn)換器和MEMS器件。介紹了關(guān)鍵組件，即SiC功率器件和模塊，柵極驅(qū)動(dòng)器和無源組件，并就組成材料，物理結(jié)構(gòu)和封裝技術(shù)進(jìn)行了比較分析。然后，討論了基于SiC的高溫轉(zhuǎn)換器在電機(jī)驅(qū)動(dòng)器，整流器單元，DC-DC轉(zhuǎn)換器以及MEMS器件領(lǐng)域的研究和發(fā)展方向。最后，確定了高溫功率電子設(shè)備面臨的現(xiàn)有技術(shù)挑戰(zhàn)，包括柵極驅(qū)動(dòng)，電流測量，每個(gè)組件之間的參數(shù)匹配以及封裝技術(shù)。

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