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首頁> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Optical properties and London dispersion interaction of amorphous and crystalline SiO_2 determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry
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Optical properties and London dispersion interaction of amorphous and crystalline SiO_2 determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry

機譯：真空紫外光譜法和橢圓偏振光譜法測定非晶態(tài)和結(jié)晶態(tài)SiO_2的光學性質(zhì)和倫敦色散相互作用

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The interband optical properties of crystalline (quartz) and amorphous SiO_2 in the vacuum ultraviolet (VUV) region have been investigated using combined spectroscopic ellipsometry and VUV spectroscopy. Over, the range of 1.5-42 eV the optical properties exhibit similar exciton and interband transitions, with crystalline SiO_2 exhibiting larger transition strengths and index of refraction. Crystalline SiO_2 has more sharp features in the interband transition strength spectrum than amorphous SiO_2, the energy of the absorption edge for crystalline SiO_2 is about 1 eV higher than that for amorphous SiO_2, and the direct band-gap energies for X-cut and Z-cut quartz are 8.30 and 8.29 eV within the absorption coefficient range 2-20 cm~(-1). In crystalline SiO_2 we report different interband transition peaks at 16.2, 20.1, 21, 22.6, and 27.5 eV, which are in addition to those lower energy transitions previously reported at 10.4, 11.6, 14, and 17.1 eV. We find the bulk plasmon energy in X- and Z-cut crystalline quartz and amorphous SiO_2 to be at 24.6, 25.2, and 23.7 eV, respectively. The oscillator strength (f) sum rules of the interband transitions for crystalline SiO_2 is 10-10.8 electrons per formula unit for transition energies up to 45 eV. These differences in the electronic structure and optical properties, and the physical densities of crystalline and amorphous SiO_2, can be attributed to differences in the intermediate-range order (IRO) and long-range order (LRO) of the different forms of SiO_2. The intimate relationship between the electronic structure and optical properties and the London dispersion interaction has attracted increased interest recently, and the role of amorphous silica and other structural glass formers as a fluid in high-temperature wetting and materials processes means a detailed knowledge of the optical properties and London dispersion interaction in SiO_2 is important. Hamaker constants for the London dispersion interaction of the configuration of two layers of c-SiO_2 or a-SiO_2 separated by an interlayer film have been determined, using full spectral methods, from the interband transition strength. The London dispersion interaction is appreciably larger in c-SiO_2 than a-SiO_2 due to the increased physical density, index of refraction, transition strengths, and oscillator strengths in quartz.
機譯：結(jié)合橢圓偏振光譜法和VUV光譜法研究了真空紫外（VUV）區(qū)域中晶體（石英）和非晶SiO_2的帶間光學性質(zhì)。在1.5-42 eV范圍內(nèi)，光學性能表現(xiàn)出相似的激子和帶間躍遷，而結(jié)晶SiO_2表現(xiàn)出更大的躍遷強度和折射率。 SiO_2晶體在帶間躍遷強度譜中的特征比非晶SiO_2更為明顯，晶體SiO_2的吸收邊能量比非晶SiO_2高約1 eV，X切和Z-的直接帶隙能量切割后的石英在吸收系數(shù)2-20 cm?（-1）范圍內(nèi)分別為8.30和8.29 eV。在晶體SiO_2中，我們報告了在16.2、20.1、21、22.6和27.5 eV處的不同帶間躍遷峰，這是先前在10.4、11.6、14和17.1 eV處報告的那些較低的能量躍遷的補充。我們發(fā)現(xiàn)X和Z切型晶體石英和非晶SiO_2中的整體等離子體激元能量分別為24.6、25.2和23.7 eV。對于高達45 eV的躍遷能量，晶體SiO_2的帶間躍遷的振子強度（f）和規(guī)則為每個公式單位10-10.8個電子。這些電子結(jié)構(gòu)和光學性質(zhì)的差異，以及結(jié)晶和無定形SiO_2的物理密度，可歸因于不同形式SiO_2的中程級（IRO）和長程級（LRO）的差異。電子結(jié)構(gòu)和光學性質(zhì)與倫敦色散相互作用之間的密切關(guān)系最近引起了越來越多的興趣，無定形二氧化硅和其他結(jié)構(gòu)玻璃形成劑在高溫潤濕和材料加工中作為流體的作用意味著對光學的詳細了解SiO_2中的性質(zhì)和倫敦分散相互作用是重要的。使用全光譜方法，根據(jù)帶間躍遷強度，確定了由夾層膜分隔的兩層c-SiO_2或a-SiO_2的構(gòu)型的倫敦色散相互作用的Hamaker常數(shù)。由于增加了石英的物理密度，折射率，躍遷強度和振子強度，因此在c-SiO_2中，倫敦色散相互作用比a-SiO_2大得多。

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