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首頁(yè)> 外文期刊>Semiconductor science and technology >High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors
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High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

機(jī)譯：基于高速短波紅外SI的GESN MQW Phototro anistor：現(xiàn)有光電探測(cè)器的替代方案

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摘要

This work demonstrates high-performance vertical GeSn multiple quantum well (MQW) heterojunction phototransistors (HPTs) on Si substrates for short-wave infrared (SWIR) applications. Estimated results show a strong dependence on the number of QWs (N), incident optical power (P-in) and capture parameter (beta). Enhanced carrier and gain confinement cause an increase in responsivity of the device with the QWs in the base layer. However, the frequency performance of the device degrades with more QWs due to the increased forward transit time. On the other hand, the 3 dB cut-off frequency (f(T)) is the highest for the lower value of beta. In addition, the detectivity and responsivity of the device decrease with an increase in incident optical power due to the change in base potential. The calculated results show that the 3 dB cut-off (f(T)) and maximum operating frequency (f(max)) are 18 GHz and 0.147 THz, respectively for N = 1 at 300 K. The detectivity and noise equivalent power are similar to 10(9)cm Hz(1/2)/W and 10(-12) WHz(-1/2), respectively for N = 3 at 300 K under 0.4 applied bias voltage. These promising results of the presented GeSn MQW HPT can pave the way for efficient low-noise high-speed photodetection applications under a low applied bias voltage.yyy
機(jī)譯：這項(xiàng)工作演示了用于短波紅外（SWIR）應(yīng)用的SI基板上的高性能垂直GESN多量子阱（MQW）異質(zhì)結(jié)晶體阱（HPT）。估計(jì)結(jié)果表明對(duì)QW（N），入射光功率（P-IN）和捕獲參數(shù)（BETA）的數(shù)量的強(qiáng)烈依賴。增強(qiáng)的載波和增益限制導(dǎo)致設(shè)備在基層中的QWS對(duì)響應(yīng)度的增加。然而，由于向前的轉(zhuǎn)運(yùn)時(shí)間增加，設(shè)備的頻率性能降低了更多的QW。另一方面，3 dB截止頻率（f（t））對(duì)于較低值的較低值的最高值。另外，由于基極電位的變化，器件的探測(cè)和響應(yīng)性隨著入射光功率的增加而減小。計(jì)算結(jié)果表明，3 dB截止（f（t））和最大工作頻率（f（max））是＆ 18 GHz和＆ 0.147至Thz，分別為n = 1，300 k。探測(cè)和噪聲等效功率類似于10（9 )cm Hz（1/2）/ w和＆ 10（-12）WHz（-1/2），分別在0.4施加的偏置電壓下以300K以300 k處為n = 3。本呈現(xiàn)的GESN MQW HPT的這些有希望的結(jié)果可以在低施加的偏置電壓下為有效的低噪聲高速光檢測(cè)應(yīng)用鋪平道路.YYY

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  • 來(lái)源
    《Semiconductor science and technology》 |2021年第6期|065023.1-065023.8|共8頁(yè)
  • 作者

    Kumar Harshvardhan;

  • 作者單位

    LNM Inst Informat Technol Dept Elect & Commun Engn Jaipur 302031 Rajasthan India|Natl Chung Cheng Univ Dept Mech Engn Chiayi 62102 Taiwan|Natl Chung Cheng Univ Adavanced Inst Mfg High Tech Innovat AIM HI Chiayi 62102 Taiwan;

  • 收錄信息 美國(guó)《科學(xué)引文索引》(SCI);美國(guó)《工程索引》(EI);美國(guó)《生物學(xué)醫(yī)學(xué)文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文語(yǔ)種 eng
  • 中圖分類
  • 關(guān)鍵詞

    cut-off frequency; detectivity; GeSn alloy; heterojunction phototransistor; quantum wells; responsivity;

    機(jī)譯：截止頻率;探測(cè);GESN合金;異質(zhì)結(jié)光晶體管;量子阱;響應(yīng)性;

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