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Convergence of Ground and Excited State Properties of Divacancy Defects in 4H-SiC with Computational Cell Size.

機(jī)譯：4H-siC中具有計(jì)算單元尺寸的雙峰缺陷的基態(tài)和激發(fā)態(tài)性質(zhì)的收斂性。

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作者
Beste, A.; Taylor, D. E.;
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年度 2018
頁碼 1-44
總頁數(shù) 44
原文格式 PDF
正文語種 eng
中圖分類
關(guān)鍵詞
Semiconductors;

機(jī)譯：半導(dǎo)體;

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1. Charge state switching of the divacancy defect in 4H-SiC [J] . Beste Ariana, Taylor DeCarlos E., Golter D. Andrew, Physical review. B, Condensed Matter And Materals Physics . 2018,第21期

機(jī)譯：4H-SiC中空位缺陷的電荷狀態(tài)轉(zhuǎn)換
2. Charge state switching of the divacancy defect in 4H-SiC [J] . Ariana Beste, DeCarlos E. Taylor, D. Andrew Golter, Physical review, B . 2018,第21期

機(jī)譯：電荷狀態(tài)切換4H-SIC中的定義缺陷
3. Divacancy in 3C- and 4H-SiC: An extremely stable defect - art. no. 085202 [J] . Torpo L., Staab TEM., Nieminen RM. Physical Review, B. Condensed Matter . 2002,第8期

機(jī)譯：3C-SiC和4H-SiC的離異：極其穩(wěn)定的缺陷-藝術(shù)。沒有。 085202
4. Ground and Excited State Properties of High Performance Anthocyanidin Dyes-Sensitized Solar Cells in The Basic Solutions [C] . Eka Cahya Prima, Brian Yuliarto, Suyatman, International Conference on Mathematics and Natural Sciences . 2015

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5. Computational Investigations of the Ground and Excited State Properties of Porphyrin-Based Light-Harvesting Arrays [D] . High, Judah Sterling. 2017

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6. Effects of Divacancy and Extended Line Defects on the Thermal Transport Properties of Graphene Nanoribbons [O] . Min Luo, Bo-Lin Li, Dengfeng Li 2019

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7. First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC [O] . Davidsson, Joel, Ivády, Viktor, Armiento, Rickard, 2017

機(jī)譯：半導(dǎo)體磁光數(shù)據(jù)的第一原理預(yù)測 ??缺陷：4H-siC中雙相缺陷的情況

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Convergence of Ground and Excited State Properties of Divacancy Defects in 4H-SiC with Computational Cell Size.

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