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首頁> 外文學(xué)位 >Intrinsic bistability, self-consistency, and transport properties in novel resonant tunneling structures.
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Intrinsic bistability, self-consistency, and transport properties in novel resonant tunneling structures.

機譯：新型共振隧穿結(jié)構(gòu)的固有雙穩(wěn)性，自洽性和傳輸特性。

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摘要

The interplay between charge confinement and intrinsic bistability is studied within the context of three distinct double-barrier resonant tunneling structures. Electrostatic feedback from electrons confined in the central quantum well of a conventional double-barrier diode modifies the potential drops across the two barriers, thus shifting the alignment between the emitter Fermi level and the quasibound state. Spacer layers positioned outside the double-barrier region which incorporate alternately light and heavy doping produce well-like features in the conduction-band profile which also give rise to multiple charge configurations. It is found that the number of solutions is limited by the requirement of self-consistency between the Schrodinger and Poisson equations. We then develop a phenomenological model which explains the bistability and hysteresis in operating current recently reported for a type-II resonant tunneling structure. This device is based on the double-barrier {dollar}InAs/Alsb{lcub}x{rcub}Gasb{lcub}1-x{rcub}Sb (0.4le xle0.6){dollar} materials system and can exhibit room-temperature current densities in excess of {dollar}rm2.5times10sp5 A/cmsp2.{dollar} The dual states correspond to two distinct amounts of charge residing in the electron and hole pockets created by the type-II band offsets. Our simulations indicate that tunneling between heavy- and light-hole levels plays a fundamental role in modifying the potential distribution across the structure via charge transfer between the two barriers. In addition, such transfer is found to be suppressed if the active layers of the device are made sufficiently thick, shallow, or asymmetric. We also explore the possibility of utilizing a double-barrier diode as the coupling mechanism between two classical superconductors to induce large gains in the critical supercurrent flowing through the structure. Resonance effects arising from an optimal alignment between the Fermi level and the subband eigenenergies in the well are shown to enhance the current by up to four orders of magnitude.
機譯：在三種不同的雙勢壘共振隧穿結(jié)構(gòu)的背景下，研究了電荷限制與固有雙穩(wěn)態(tài)之間的相互作用。來自限制在常規(guī)雙勢壘二極管中心量子阱中的電子的靜電反饋會修改兩個勢壘之間的電勢降，從而改變發(fā)射器費米能級和準(zhǔn)結(jié)合態(tài)之間的對準(zhǔn)。位于雙勢壘區(qū)外部的隔離層交替地?fù)饺肓溯p摻雜和重?fù)诫s，在導(dǎo)帶輪廓中產(chǎn)生了類似的特征，這也引起了多個電荷構(gòu)型。發(fā)現(xiàn)解決方案的數(shù)量受到薛定inger方程和泊松方程之間自洽要求的限制。然后，我們建立一個現(xiàn)象學(xué)模型，該模型解釋了最近報道的II型共振隧穿結(jié)構(gòu)的工作電流中的雙穩(wěn)態(tài)和滯后現(xiàn)象。該設(shè)備基于雙重阻擋層{dollar} InAs / Alsb {lcub} x {rcub} Gasb {lcub} 1-x {rcub} Sb（0.4le xle0.6）{dollar}材料系統(tǒng)，并且可以展示-溫度電流密度超過{rmal} rm2.5×10sp5 A / cmsp2。{dollar}雙態(tài)對應(yīng)于由II型能帶偏移產(chǎn)生的電子和空穴中存在的兩個不同的電荷量。我們的模擬表明，重孔和輕孔之間的隧穿在通過兩個勢壘之間的電荷轉(zhuǎn)移來改變整個結(jié)構(gòu)的電勢分布中起著基本作用。另外，如果使器件的有源層足夠厚，淺或不對稱，則抑制了這種轉(zhuǎn)移。我們還探討了使用雙勢壘二極管作為兩個經(jīng)典超導(dǎo)體之間的耦合機制，以在流過該結(jié)構(gòu)的臨界超電流中感應(yīng)出大增益的可能性。費米能級與阱中子帶本征能之間的最佳對準(zhǔn)產(chǎn)生的共振效應(yīng)顯示出可將電流提高多達四個數(shù)量級。

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  • 作者

    Waung, Raymund Tsun-Tung.;

  • 作者單位

    University of California, Los Angeles.;

  • 授予單位 University of California, Los Angeles.;
  • 學(xué)科 Physics Condensed Matter.; Engineering Electronics and Electrical.
  • 學(xué)位 Ph.D.
  • 年度 1997
  • 頁碼 88 p.
  • 總頁數(shù) 88
  • 原文格式 PDF
  • 正文語種 eng
  • 中圖分類 無線電電子學(xué)、電信技術(shù);
  • 關(guān)鍵詞

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