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首頁> 美國政府科技報(bào)告 >Development of High-Temperature, High-Power, High-Efficiency, High- Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties
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Development of High-Temperature, High-Power, High-Efficiency, High- Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties

機(jī)譯：使用碳化硅（siC）交付訂單交付訂單交付訂單開發(fā)高溫，高功率，高效率，高壓轉(zhuǎn)換器：基于材料和器件屬性的siC VJFET設(shè)計(jì)和性能的關(guān)鍵分析

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Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.

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