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首頁> 外文期刊>Bulletin of the Chemical Society of Japan >Influence of Complexing Agents on Adhesion Strength of Electroless Nickel-Phosphorus Plating to Silicon Nitride-Aluminum-Polyimide Mixed Substrates
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Influence of Complexing Agents on Adhesion Strength of Electroless Nickel-Phosphorus Plating to Silicon Nitride-Aluminum-Polyimide Mixed Substrates

機(jī)譯：絡(luò)合劑對氮化硅 - 鋁 - 鋁 - 聚酰亞胺混合基材的電鍍鎳磷粘附強(qiáng)度的影響

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The adhesion force of electroless nickel-phosphorus (Ni-P) platings prepared on silicon nitride (SiN), aluminum (Al), and polyimide (PI) substrates using complexing agents of glycine, succinic acid, succinic acid with glycine, and succinic acid with malic acid was demonstrated for the application to wafer-level packaging in large-scale integrated circuits. The adhesion strength of Ni-P platings was investigated by the tape-peeling test and the universal mechanical strength tester. As results, no peeling of Ni-P films formed using glycine, succinic acid, and succinic acid with glycine were observed, although Ni-P films formed using succinic acid with malic acid showed peeling Thus, Ni-P plating formed using succinic acid with malic acid gave the smallest adhesion force. In contrast, the adhesion force of Ni-P platings formed using succinic acid with glycine on SiN, Al, and PI was the largest, approximately 850 kg cm(-2), among Ni-P platings formed using those complexing agents. The growth rate of Ni-P films formed using succinic acid, succinic acid with glycine, and succinic acid with malic acid was uneven on SiN, Al, and PI. In comparison, Ni-P plating formed using glycine provided uniform growth rate on SiN, Al, and PI.
機(jī)譯：使用甘氨酸，琥珀酸，琥珀酸與甘氨酸的絡(luò)合劑，含硅酸鋁（SiN），鋁（Al），鋁（Al），鋁（Al）和聚酰亞胺（PI）基材上制備的無電鎳 - 磷（Ni-P）夾板的粘附力用蘋果酸證明在大規(guī)模集成電路中應(yīng)用于晶片水平包裝。通過剝離試驗(yàn)和通用機(jī)械強(qiáng)度測試儀研究了Ni-P鍍層的粘合強(qiáng)度。結(jié)果，觀察到?jīng)]有使用甘氨酸，琥珀酸和琥珀酸形成的Ni-P膜的剝離，盡管使用蘋果酸與蘋果酸形成的Ni-P膜顯示出剝離，但是使用琥珀酸形成的Ni-P電鍍蘋果酸得到最小的粘附力。相反，在使用這些絡(luò)合劑形成的Ni-P鍍層中，使用琥珀酸與甘氨酸與甘氨酸形成的Ni-P平板的粘附力是最大的大約850kgcm（-2）。使用琥珀酸，琥珀酸與甘氨酸形成的Ni-P膜的生長速率，與蘋果酸與蘋果酸在SIN，Al和Pi上不均勻。相比之下，使用甘氨酸形成的Ni-P電鍍在SiN，Al和Pi上提供均勻的生長速率。

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    Kanto Gakuin Univ Inst Sci &

    Technol Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Inst Sci &

    Technol Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Fac Engn Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Fac Engn Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Fac Engn Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Inst Sci &

    Technol Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

    Kanto Gakuin Univ Inst Sci &

    Technol Kanazawa Ku Yokohama Kanagawa 2368501 Japan;

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