国产bbaaaaa片,成年美女黄网站色视频免费,成年黄大片,а天堂中文最新一区二区三区,成人精品视频一区二区三区尤物

首頁> 外文學(xué)位 >Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model.

【24h】

Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model.

機譯：使用Angelov模型在PSpice中對碳化硅（SIC）垂直結(jié)場效應(yīng)晶體管（VJFET）進行緊湊建模，并使用SIC VJFET模型對PSpice模擬電路構(gòu)建模塊進行仿真。

獲取原文

獲取原文并翻譯 | 示例

頁面導(dǎo)航

摘要
著錄項
引文網(wǎng)絡(luò)
相似文獻
相關(guān)主題

摘要

This thesis presents the development of compact model of novel Silicon Carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power PSpice circuit simulation using empirical Angelov model. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers.; The developed SiC VJFET model was applied for investigating the characteristics of few analog circuits. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier.

機譯：本文提出了基于經(jīng)驗Angelov模型的新型大功率PSpice電路仿真的新型碳化硅（SiC）垂直結(jié)場效應(yīng)晶體管（VJFET）的緊湊模型的開發(fā)。該模型能夠針對DC和瞬態(tài)條件準確復(fù)制設(shè)備行為。該模型已根據(jù)MSU和SemiSouth Laboratories的密西西比州高級半導(dǎo)體原型開發(fā)中心開發(fā)的設(shè)備獲得的測量數(shù)據(jù)進行了驗證。該建模方法基于對不同參數(shù)（溫度，寬度等）的非線性擬合從實驗設(shè)備特性中提取Angelov方程系數(shù)。多維插值技術(shù)用于合并多個參數(shù)的影響。預(yù)期該研究中開發(fā)的模型將成為電子設(shè)計師的寶貴工具。所開發(fā)的SiC VJFET模型用于研究少量模擬電路的特性。所選的感興趣的電路是電壓跟隨器，公共電源放大器，電流源和差分放大器。

著錄項

作者
Purohit, Siddharth.;
展開▼
作者單位

Mississippi State University.;

展開▼
授予單位 Mississippi State University.;
學(xué)科 Engineering Electronics and Electrical.; Engineering Materials Science.
學(xué)位 M.S.
年度 2006
頁碼 88 p.
總頁數(shù) 88
原文格式 PDF
正文語種 eng
中圖分類無線電電子學(xué)、電信技術(shù);工程材料學(xué);
關(guān)鍵詞

相似文獻

外文文獻
中文文獻
專利

1. Design and analysis of normally-on 4H-sic vertical junction field effect transistor (VJFET) using sentaurus TCAD simulation [J] . M. Khalid, J. K. Khan, G. Mustafa, Journal of Ovonic Research . 2019,第5期

機譯：使用Sentaurus TCAD模擬設(shè)計和分析常導(dǎo)4H-sic垂直結(jié)場效應(yīng)晶體管（VJFET）
2. Development of a PSPICE Model for 1200 V / 800 A SiC Bipolar Junction Transistor Power Module [J] . Daniel Johannesson, Muhammad Nawaz Materials science forum . 2015,第期

機譯：1200 V / 800 A SiC雙極結(jié)型晶體管功率模塊的PSPICE模型的開發(fā)
3. Modeling and Simulation of Silicon Carbide (SiC) Based Bipolar Junction Transistor [J] . Dr.R.Seyezhai International Journal of Engineering Research and Applications . 2011,第4期

機譯：基于碳化硅（SiC）的雙極結(jié)晶體管的建模與仿真
4. Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications [C] . Cheng L., Sankin I., Merrett J.N., International Conference on Semantic Technology and Information Retrieval . 2011

機譯：用于空間應(yīng)用的4H-SiC垂直接合場效應(yīng)晶體管（VJFET）的低溫和高溫性能
5. Physical modeling of silicon carbide power junction field effect transistor and model levels for semiconductor devices. [D] . Chen, Zhiyang. 2010

機譯：碳化硅功率結(jié)場效應(yīng)晶體管的物理模型和半導(dǎo)體器件的模型級別。
6. Characterization Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications [O] . Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel 2010

機譯：用于溫度傳感器的碳化硅結(jié)型場效應(yīng)晶體管的特性建模和設(shè)計參數(shù)辨識
7. Sic MOSFET Modeling and Simulation for Pspice [O] . Xiafei Zhu, Guolin Xu, Shaokang Jiao, 2015

機譯：SIC MOSFET建模與PSPICE的模擬
8. Development of High-Temperature, High-Power, High-Efficiency, High- Voltage Converters Using Silicon Carbide (SiC) Delivery Order Delivery Order 0002: Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties [R] . Sung, Y. , Mazzola, M. S. 2005

機譯：使用碳化硅（siC）交付訂單交付訂單交付訂單開發(fā)高溫，高功率，高效率，高壓轉(zhuǎn)換器：基于材料和器件屬性的siC VJFET設(shè)計和性能的關(guān)鍵分析

獲取原文

客服郵箱：kefu@zhangqiaokeyan.com

京公網(wǎng)安備：11010802029741號 ICP備案號：京ICP備15016152號-6 六維聯(lián)合信息科技 (北京) 有限公司?版權(quán)所有

客服微信
服務(wù)號

国产bbaaaaa片,成年美女黄网站色视频免费,成年黄大片,а天堂中文最新一区二区三区,成人精品视频一区二区三区尤物

Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model.

摘要

著錄項

引文網(wǎng)絡(luò)

相似文獻

相關(guān)主題

期刊訂閱